Microlab
Process Monitoring

Welcome to Microlab's Process Monitoring Web Site. From here, you can review the most recent test monitor data. Click on the equipment categories on the left side of this page, and proceed with the selection of desired equipment on the following page. The latest test monitor data and the trend chart of each baseline process equipment can be viewed under these equipment categories. Test monitor frequency and specification limits are listed below (table).

 

Equipment

Monitoring

Name

Process

Parameters

Limits

Frequency

tystar1

Gate Oxidation

Thickness Non-Uniformity

Within Wafer<10 %

1/month

Wafer to Wafer<20%

IQF

<2.0

tystar2

Dry/Wet Oxidation

Thickness Non-Uniformity

Within Wafer<10%

1/month

Wafer to Wafer<20%

IQF

<2.0

tystar5

Gate Oxidation

Thickness Non-Uniformity

Within Wafer<10%

1/month

Wafer to Wafer<20%

IQF

<2.0

tystar6

Gate Oxidation

Thickness Non-Uniformity

Within Wafer<10%

1/month

Wafer to Wafer<20%

IQF

<2.0

tystar9

LPCVD Nitride

Deposition Rate

50 A/min +/- 10%

 

1/month

 

Thickness Non-Uniformity

Within Wafer <5%

Wafer to Wafer <20%

tystar10

LPCVD Poly-Silicon

Deposition Rate

28 A/min +/- 15%

 

1/month

 

Thickness Non-Uniformity

Within Wafer <10%

Wafer to Wafer <35%

Resistivity

12 Ohms/sq. +/- 25%

1/6 months

tystar11

LPCVD Phospho-Silicate Glass

Deposition Rate

180 A/min +/- 5%

 

1/month

 

Thickness Non-Uniformity

Within Wafer <10%

Wafer to Wafer <30%

Dopant Concentration

6% - 7%

1/4 months

tystar12

LPCVD Phospho-Silicate Glass

Deposition Rate

130 A/min +/- 5%

 

1/month

 

Thickness Non-Uniformity

Within Wafer <5%

Wafer to Wafer <10%

Dopant Concentration

5% - 6%

1/4 months

tystar16

LPCVD Poly-Silicon

Deposition Rate

80 A/min +/- 10%

 

1/month

 

Thickness Non-Uniformity

Within Wafer <5%

Wafer to Wafer <20%

tystar17

LPCVD Low-Stress Nitride

Deposition Rate

40 A/min +/- 10%

 

1/month

 

Thickness Non-Uniformity

Within Wafer <15%

Wafer to Wafer <25%

Film Stress

300 +/- 50 MPa

CPA

Sputtered Alumnium

Deposition Constant

80 nm*(cm/min)

1/2 months 

Reflectivity vs. bare Si

200%

svgcoat1,2

I-Line Photoresist

Thickness Uniformity

Within Wafer <5%

1/2 weeks

Wafer to Wafer <5%

G-Line Photoresist

Thickness Uniformity

Within Wafer <5%

1/2 weeks

Wafer to Wafer <5%

svgcoat6

DUV Photoresist

Thickness Uniformity

Within Wafer <5%

1/2 weeks

Wafer to Wafer <5%

ASML

DUV Resist Exposure

Clear Energy(Eo)

15 mJ/cm2 +/- 15%

1/2 weeks

lam1

Nitride Plasma Etching

Etch Rate

1000 A/min +/- 10%

 

1/month

 

Etch Rate Non-Uniformity

Within Wafer <10%

Wafer to Wafer <10%

lam2

Oxide Plasma Etching

Etch Rate

5800 A/min +/- 10%

 1/month

Etch Rate Non-Uniformity

Within Wafer <20%

Wafer to Wafer <20%

lam3

Aluminium Plasma Etching

Etch Rate

5000 A/min +/- 10%

1/3 months

lam5

Polysilicon Plasma Etching

Etch Rate

5000 A/min +/- 10%

 

1/month

 

Etch Rate Non-Uniformity

Within Wafer <5%

Wafer to Wafer <5%